Rf Mosfet Transistor

1. Rf Mosfet Transistor Types
2. Mosfet Transistor Types

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RF Power Mosfet is POLYFET Polyfet RF Devices is a manufacturer of broad band RF power transistors and power modules. We are a private corporation that has been in business since 1988. Our devices consist of Gallium Nitride, LDMOS, and VDMOS technologies processed using state of the art equipment.

1. Microwave and RF components. Via Dante, 5 20030 Senago (MI) Italy Tel.: +276 Fax: +740.
2. MOSFET RF transistors are metal-oxide field effect transistors (MOSFETs) that are designed to handle high-power radio frequency (RF) signals from devices such as stereo amplifiers, radio transmitters, and television monitors. They are turned on and off by input voltages and function as miniature electronic switches.
3. RF Power MOS FET (Discrete) RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout6W, Gp13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in.

1. MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V M/A-COM (NOS)

   MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V M/A-COM (NOS)

   New Old Stock * No longer available for export

   MRF275G-MA

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2. MRF221 NPN Silicon RF Power Transistor, 12.5 V, 175 MHz, 15 W, Motorola

   MRF221 NPN Silicon RF Power Transistor, 12.5 V, 175 MHz, 15 W, MFR: Motorola No longer available for Export, (NOS)

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3. MRF221 NPN Silicon RF Power Transistor, Matched Pair, 12.5 V, 175 MHz, 15 W, Motorola

   MRF221 NPN Silicon RF Power Transistor, Matched Pair, 12.5 V, 175 MHz, 15 W, MFR: Motorola No longer available for Export, (NOS)

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4. MRF247 Transistor, 175 MHz, 75w, 12.5v, Motorola (NOS)

   MRF247 Transistor,12V, (See Sub TOSHIBA 2SC2782), MFR: Motorola, No longer available for Export, (NOS)

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5. MRF248 NPN Silicon RF Transistor, 12 V, 175 MHz, 80 W, Motorola

   MRF248 NPN Silicon RF Transistor, 12 V, 175 MHz, 80 W, MFR: Motorola No longer available for Export, (NOS)

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6. MRF248 NPN Silicon RF Transistor, Matched Pair, 12.5 V, 175 MHz, 80 W (SRF3897), Motorola

   MRF248 NPN Silicon RF Transistor, Matched Pair, 12.5 V, 175 MHz, 80 W, MFR: Motorola (SRF3897) No longer available for Export, (NOS)

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7. MRF275G Motorola Mosfet Transistor 150W 500MHz 28V (NOS)

   Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

   • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
   • 100% tested for load mismatch at all phase angles with VSWR 30:1
   • Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
   • Simplified AVC, ALC and modulation
   • Typical data for power amplifiers in industrial and commercial applications:
   • Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
   • Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

   New Old Stock * No longer available for export

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8. MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

   MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

   Fet amp. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.The voltage of the covered gate determines the electrical conductivity of the device; this. The common source FET amplifier circuit is one of the most commonly used providing current and voltage gain along with a satisfactory input and output impedance. FET, Field Effect Transistor Circuit Design Includes: FET circuit design basics Circuit. The short-lived and rare Boss FA-1 FET Amplifier is a clean boost and pre-amp with a switchable low-cut filter and separate bass and treble controls. The Edge of U2 is known for using a Boss FA-1 regularly as part of his rig. This prominent use and the rarity of original specimens have led to a. 9-1: The Common Source Amplifier (CS Amplifier) FET has an important advantage compared to the BJT due to the FET's extremely high input impedance. Disadvantages, however, include higher distortion and lower gain. The common-source (CS) amplifier iscomparable to the common-emitter BJT amplifier that you studied in Chapter 6. The JFET can be used as a linear amplifier by reverse-biasing its gate relative to its source terminal, thus driving it into the linear region. Three basic JFET biasing techniques are in common use.

   New Old Stock * No longer available for export

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9. MRF247 Transistor, 175 MHz, 75w, 12.5v, (Low Beta) TRW (NOS)

   MRF247 Transistor, 175 MHz, 75w, (Low Beta) MFR: TRW No longer available for Export, (NOS)

The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

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RF Power Mosfet is POLYFET Polyfet RF Devices is a manufacturer of broad band RF power transistors and power modules. We are a private corporation that has been in business since 1988. Our devices consist of Gallium Nitride, LDMOS, and VDMOS technologies processed using state of the art equipment.

1. Microwave and RF components. Via Dante, 5 20030 Senago (MI) Italy Tel.: +276 Fax: +740.
2. MOSFET RF transistors are metal-oxide field effect transistors (MOSFETs) that are designed to handle high-power radio frequency (RF) signals from devices such as stereo amplifiers, radio transmitters, and television monitors. They are turned on and off by input voltages and function as miniature electronic switches.
3. RF Power MOS FET (Discrete) RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout6W, Gp13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in.

1. MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V M/A-COM (NOS)

   MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V M/A-COM (NOS)

   New Old Stock * No longer available for export

   MRF275G-MA

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2. MRF221 NPN Silicon RF Power Transistor, 12.5 V, 175 MHz, 15 W, Motorola

   MRF221 NPN Silicon RF Power Transistor, 12.5 V, 175 MHz, 15 W, MFR: Motorola No longer available for Export, (NOS)

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3. MRF221 NPN Silicon RF Power Transistor, Matched Pair, 12.5 V, 175 MHz, 15 W, Motorola

   MRF221 NPN Silicon RF Power Transistor, Matched Pair, 12.5 V, 175 MHz, 15 W, MFR: Motorola No longer available for Export, (NOS)

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4. MRF247 Transistor, 175 MHz, 75w, 12.5v, Motorola (NOS)

   MRF247 Transistor,12V, (See Sub TOSHIBA 2SC2782), MFR: Motorola, No longer available for Export, (NOS)

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5. MRF248 NPN Silicon RF Transistor, 12 V, 175 MHz, 80 W, Motorola

   MRF248 NPN Silicon RF Transistor, 12 V, 175 MHz, 80 W, MFR: Motorola No longer available for Export, (NOS)

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6. MRF248 NPN Silicon RF Transistor, Matched Pair, 12.5 V, 175 MHz, 80 W (SRF3897), Motorola

   MRF248 NPN Silicon RF Transistor, Matched Pair, 12.5 V, 175 MHz, 80 W, MFR: Motorola (SRF3897) No longer available for Export, (NOS)

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7. MRF275G Motorola Mosfet Transistor 150W 500MHz 28V (NOS)

   Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

   • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
   • 100% tested for load mismatch at all phase angles with VSWR 30:1
   • Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
   • Simplified AVC, ALC and modulation
   • Typical data for power amplifiers in industrial and commercial applications:
   • Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
   • Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

   New Old Stock * No longer available for export

   • |Add to Compare

8. MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

   MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

   Fet amp. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.The voltage of the covered gate determines the electrical conductivity of the device; this. The common source FET amplifier circuit is one of the most commonly used providing current and voltage gain along with a satisfactory input and output impedance. FET, Field Effect Transistor Circuit Design Includes: FET circuit design basics Circuit. The short-lived and rare Boss FA-1 FET Amplifier is a clean boost and pre-amp with a switchable low-cut filter and separate bass and treble controls. The Edge of U2 is known for using a Boss FA-1 regularly as part of his rig. This prominent use and the rarity of original specimens have led to a. 9-1: The Common Source Amplifier (CS Amplifier) FET has an important advantage compared to the BJT due to the FET's extremely high input impedance. Disadvantages, however, include higher distortion and lower gain. The common-source (CS) amplifier iscomparable to the common-emitter BJT amplifier that you studied in Chapter 6. The JFET can be used as a linear amplifier by reverse-biasing its gate relative to its source terminal, thus driving it into the linear region. Three basic JFET biasing techniques are in common use.

   New Old Stock * No longer available for export

   • |Add to Compare

9. MRF247 Transistor, 175 MHz, 75w, 12.5v, (Low Beta) TRW (NOS)

   MRF247 Transistor, 175 MHz, 75w, (Low Beta) MFR: TRW No longer available for Export, (NOS)

   The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

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The Infineon MOSFETs include several sub-categories, depending on whether the biasing resistor network at the RF input port is fully integrated (full-biased), partly integrated (semi-biased) or not at all integrated (non-biased). Mainstream TV tuners are either a semi-biased or an intelligent-switching concept, while FM radio tuners mainly use single non-biased or single full-biased MOSFETs.

Rf Mosfet Transistor Types

As a key component in the tuner pre-stage circuit, Infineon RF MOSFET features:

Mosfet Transistor Types

• Best-in-class noise figure and gain
• Excellent cross-modulation
• ESD robustness protected via an on-chip gate protection diode
• 5th generation MOSFETs such as BF5030W and BG5120K fulfill the stringent technical requirement from the digital tuners and also support low-power 3V designs
• Automotive quality (AEC Q101 qualified)
• RoHS compliant